Author Affiliations
Abstract
1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
2 Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China
3 Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
4 e-mail: rszheng@szu.edu.cn
This erratum corrects errors that appeared in
Photon. Res.3, 38 (2015)PRHEIZ2327-912510.1364/PRJ.3.000038 related to the polarization of the experimental optical path and a few typos.
Photonics Research
2020, 8(3): 03000412
Author Affiliations
Abstract
1 Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
2 Sino-German College for Intelligent Manufacturing, Shenzhen Technology University, Shenzhen 518060, China
3 Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
4 Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
Supercontinuum generation (SC) of more than one octave spectrum spanning covering from 400 nm to 820 nm was achieved by pumping a piece of aluminum nitride (AIN) single crystal using a nanosecond 355 nm ultraviolet laser. The AlN with a thickness of ～0.8 mm was grown by an optimized physical vapor transport technique and polished with solidification technology. Compared to previously reported ones, the achieved visible SC exhibited the broadest spectrum spanning from bulk materials pumped by a nanosecond pulse laser. The visible supercontinuum in AlN presents new opportunities for bulk material-based white light SC and may find more potential applications beyond typical applications in integrated semiconductive photoelectronic devices.
320.6629 Supercontinuum generation 190.2640 Stimulated scattering, modulation,etc. 190.4720 Optical nonlinearities of condensed matter Chinese Optics Letters
2018, 16(4): 043201
Author Affiliations
Abstract
1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-Sen University, Guangzhou 510275, China
2 Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China
3 Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
The angle dependence of optical phonon modes of an AlN bulk single crystal from the m-plane (1100) and c-plane (0001) surfaces, respectively, is investigated by polarized Raman spectroscopy in a backscattering configuration at room temperature. Corresponding Raman selection rules are derived according to measured scattering geometries to illustrate the angle dependence. The angle-dependent intensities of phonon modes are discussed and compared to theoretical scattering intensities, yielding the Raman tensor elements of A1(TO), E22 , E1(TO), and A1(LO) phonon modes and the relative phase difference between the two complex elements of A1_TO_. Furthermore, the Raman tensor of wurtzite AlN is compared with that of wurtzite ZnO reported in previous work, revealing the intrinsic differences of lattice vibration dynamics between AlN and ZnO.
Semiconductor materials Semiconductor materials Scattering Scattering Raman Raman Scattering Scattering polarization polarization Photonics Research
2015, 3(2): 02000038
1 教育部光电子设备与系统重点实验室(深圳大学)，深圳大学光电子学研究所，深圳 518060
2 华南师范大学信息光电子科技学院，广州 510631
利用Order－N算法及超晶格技术讨论了位置无序及尺寸无序对石墨点阵柱状光子晶体光子带隙的影响．计算结果表明，对于电场偏振模，光子带隙对尺寸无序更加敏感．在此基础上，利用三维时域有限差分方法进一步讨论了无序光子晶体对石墨点阵柱状中心柱光子晶体GaN发光二极管模型光输出效率的影响．计算结果表明，无序对这种光子晶体发光二极管模型光输出效率的影响较小，且这种影响也是随机的
无序光子晶体 光子带隙 发光二极管 氮化镓 Disordered photonic crystal Photonic band gaps Light-emitting diodes GaN
